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Self Consistent A. Self - Consistent Fluid and hybrid Models in PTLUP PTLUP has been involved to the development of self-consistent fluid and hybrid models since 2001. The self-consistent approach is required in order to simulate plasma reactors were typical plasma diagnostics measurements cannot be applied as medium and industrial scaled systems. Such types of models require a minimum number of inputs and counts for all physical and chemical processes that take place during the Plasma Processing of materials. PTLUP model involves the following modules: Flow module
Heat module Chemistry module Plasma Module Electromagnetic module The main problem of such type of simulation is the large scattering of time scales that are required for the convergence of the different modules and the extensive in some cases gas phase and surface chemistry of the processes. Advanced numerical algorithms are necessary for fast convergence while High Performance Computing systems and parallel processing are required especially in the case of industrial systems PTLUP has already develop and use self-consistent model for the simulation of - Amorphous and microcrystalline silicon deposition from SiH4/H2 plasmas Typical steps that are required for the simulation of the plasma process are: - Geometry creation and meshing B. RESULTS The model counts for flow, heat, chemistry, plasma and electromagnetism that produces outputs for all these modules Characteristic example of flow in a PECVD reactor Characteristic example of heating in a PECVD reactor Characteristic example of plasma electrical properties in a PECVD reactor Power dissipation Electron flux Characteristic example of species distribution in SiH4/H2 discharges H atoms density distribution for different SiH4/H2 mixtures
1 % SiH4 2 % SiH4 3 % SiH4 4 % SiH4 Characteristic example of species distribution in SiH4/H2 discharges
Sheath expansion/contraction cycle in large area Argon CCP, when electromagnetic (standing wave) effect is included: - Electron density spatiotemporal mapping - Electric potential profile in the powered electrode and C. GEOMETRIES
Creation of detailed geometries and detailed meshing of simulated areas are extremely important for accurate solutions PTLUP has years of experience in creating geometries of reactors either installed in the lab or of industrial and R/D partners Examples of 2 and 3d geometries
D. SOLVING For simulation of large area reactors and geometries above 0.5 Mcells parallel processing has been developed and problems are solved in cluster of PC's 64 cores are available of Intel® Xeon® Processor E5540 for modelling of large scale systems E. PUBLICATIONS Click here to download a presentation of the model Recent publications of the group related to self consistent modeling: "Growth kinetics of plasma deposited microcrystalline silicon thin Flms", Surf. Coat. Technol., Accepted for publication - Corrected Proofs, E. Amanatides and D. Mataras ©
"Simulation of cylindrical electron cyclotron wave resonance argon discharges", S. Sfikas, E. Amanatides, D. Mataras and D.E. Rapakoulias J. Phys. D - Appl. Phys., 44 (2011) 165204 ©
"Fluid Model of an Electron Cyclotron Wave Resonance Discharge” S. A. Sfikas, E. K. Amanatides, D. S. Mataras and D. E. Rapakoulias IEEE Trans. Plasma Science 10.1109/TPS.2007.905946 Page(s): 1420-1425 (2007) ©
“Simulation of The Electrical Poperties of SiH4/H2 RF Discharges” B. Lyka, E. Amanatides and D. Mataras Jap. J. Appl. Phys. 45 (2006) 8172-8176 ©
"Relative importance of hydrogen atom flux and ion bombardment to the growth of μc-Si:H thin films" B. Lyka, E. Amanatides and D. Mataras Journal of Non-Crystalline Solids, 352 1049 2006 ©
"Plasma 2D modeling and diagnostics of DLC deposition on PET" E. Amanatides, P. Gkotsis, Ch. Syndrevelis and D. Mataras Diamond and Related Materials, 15 904 (2006) ©
"Plasma Enhanced Chemical Vapor Deposition of Silicon under Relatively High Pressure Conditions" E. Amanatides, B. Lykas and D. Mataras IEEE Trans. Plasma Sci. 33, 372 (2005) ©
B. Lykas, E. Amanatides, D. Mataras, D. E. Rapakoulias J. Phys.: Conf. Ser. 10 (2005) 198-201 © | ||
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