Project: ATHLET

 



Title: "Advanced Thin-Film Technologies for Cost Effective Photovoltaics "

 

IP PROJECT FP6

 

Short Description: Long term scenarios for a sustainable global development suggest that it should be feasible by the middle of this century to provide over 80% of the electric power by a mix of energy from renewable sources. Photovoltaics (PV) is one important option which could provide a significant share of over 30% to such a mix. The approach of this project is to focus on the most promising materials and device options for thin-film technologies, namely cadmium-free cells and modules based on amorphous, micro- and polycrystalline silicon as well as on I-III-VI2-chalcopyrite compound semiconductors.

The overall goal of this project is to provide the scientific and technological basis for an industrial mass production of cost effective and highly efficient, environmentally-sound, large-area thin film solar cells and modules. This includes development of the process know-how and the production technology as well as the design and fabrication of specialised equipment.

By drawing on a broad range of expertise the entire range of module fabrication and supporting R&D will be covered: Substrates, semiconductor/contact deposition, monolithic series interconnection, encapsulation, performance evaluation and applications.

The main objectives are two-fold:

  - development and improvement of existing thin film PV technologies with the goal of increasing module efficiency/cost ratio to increase competitiveness of PV; goal: specific module costs of less than 0.5 €/WP. 
  - providing the know-how and the scientific basis for a future generation of PV modules by identifying and testing new materials and technologies with higher potential for cost reduction. This includes the development and analysis of materials, new concepts for solar cell structures, laboratory-scale photovoltaic devices, prototypes for modules, improvement of the required process technologies, development and application of new analytical methods for device characterisation.

 


 

Start Date: 2006-01-01

 

End Date: 2009-12-31

 

Duration: 48 months

 

Project Status: Completed

 

 



Self Consistent

Plasma Modeling:
Self - Consistent Fluid and hybrid Models in PTLUP

Plasma Technology Laboratory has been involved to the development of  self-consistent fluid and hybrid models since 2001. The self-consistent approach is required in order to simulate plasma reactors were typical plasma diagnostics measurements cannot be applied as medium and industrial scaled systems.

Such types of models require a minimum number of inputs and counts for all physical and chemical processes that take place during the Plasma Processing of materials. PTLup model involves the following modules   
Flow module
Equations: Navier –Stokes
Results:     Flow field – Gas velocity – Gas density distribution
Time:         Slow step ~ 1-2 sec
Heat module
 Equations:         Heat conduction - convection – diffusion – radiation
Results:             Temperature and gas enthalpy maps
Time:         Slow step ~ 1-2 sec
Chemistry module
 Equations:         Mass balance of species
Results:             Reactions rate, species density distribution, species flux towards surfaces
Time:                 Intermediate step ~ 1 – 300 msec
Plasma Module
 Equations:         Mass balance of electrons and ions, Energy balance of electrons and ions
 Results:             Electrons and ions density distribution, ions flux towards surfaces, electron –  molecule collision rates
Time:                 Fast step ~ 1-10 μsec
Electromagnetic module
Equations: Poisson’s equation
Results:             Distribution of electrostatic field and voltage
Time:                 Fast step ~ 1-10 μsec
 

The main problem of such type of simulation is the large scattering of time scales that are required for the convergence of the different modules and the extensive in some cases gas phase and surface chemistry of the processes. Advanced numerical algorithms are necessary for fast convergence while High Performance Computing systems and parallel processing are required especially in the case of industrial systems

PTLUP has already develop and use self-consistent model for the simulation of
bullet    Amorphous and microcrystalline silicon deposition from SiH4/H2 plasmas
bullet    Diamond-like thin film deposition from CH4/H2 discharges
bullet    Treatment of polymers from He and He/O2 discharges

Check here for some characteristic results and a presentation of the model!

Typical steps that are required for the simulation of the plasma process are:
bullet    Geometry creation and meshing
bullet    Problem solution
bullet    Post - Processing of the data

Hit the links to see more information on these steps!

RESULTS

The model counts for flow, heat, chemistry, plasma and electromagnetism that produces outputs for all these modules

Characteristic example of flow in a PECVD reactor

Characteristic example of heating in a PECVD reactor

Characteristic example of plasma electrical properties in a PECVD reactor

Power dissipation

Electron flux

Characteristic example of species distribution in SiH4/H2 discharges

H atoms density distribution for different SiH4/H2 mixtures

                                                            1 % SiH4                         2 % SiH4                    3 % SiH4                    4 % SiH4

Characteristic example of species distribution in SiH4/H2 discharges

GEOMETRIES

 Creation of detailed geometries and detailed meshing of simulated areas are extremely important for accurate solutions

PTLUP has years of experience in creating geometries of reactors either installed in the lab or of industrial and R/D partners

Examples of 2 and 3d geometries

SOLVING

For simulation of large area reactors and geometries above 0.5 Mcells parallel processing has been developed and problems are solved in cluster of PC's

64 cores are available of Intel® Xeon® Processor E5540 for modelling of large scale systems

More information of the High Performance Computing system are here

PUBLICATIONS

Click hereto download a presentation of the model

 Recent publications of the group related to self consistent modeling

    "Growth kinetics of plasma deposited microcrystalline silicon thin ?lms", Surf. Coat. Technol., Accepted for publication - Corrected Proofs,
     E. Amanatides and D. Mataras ©

 


   "Simulation of cylindrical electron cyclotron wave resonance argon discharges"
   S. Sfikas, E. Amanatides, D. Mataras and D.E. Rapakoulias
   J. Phys. D - Appl. Phys., 44 (2011) 165204 ©


    "Fluid Model of an Electron Cyclotron Wave Resonance Discharge”
    S. A. Sfikas, E. K. Amanatides, D. S. Mataras, D. E. Rapakoulias,
    IEEE Trans. Plasma Science 10.1109/TPS.2007.905946 Page(s): 1420-1425 (2007) ©


    “Simulation of The Electrical Poperties of SiH4/H2 RF Discharges”
    B. Lyka, E. Amanatides and D. Mataras
    Jap. J. Appl. Phys. 45 (2006) 8172-8176 © 


    "Relative importance of hydrogen atom flux and ion bombardment to the growth of μc-Si:H thin films"
    B. Lyka, E. Amanatides and D. Mataras
    Journal of Non-Crystalline Solids, 352 1049 2006 ©

    "Plasma 2D modeling and diagnostics of DLC deposition on PET"
    E. Amanatides, P. Gkotsis, Ch. Syndrevelis and D. Mataras
    Diamond and Related Materials, 15 904 (2006) ©

    "Plasma Enhanced Chemical Vapor Deposition of Silicon under Relatively High Pressure Conditions"
    E. Amanatides, B. Lykas and D. Mataras
    IEEE Trans. Plasma Sci. 33, 372 (2005)  ©

    "Power consumption effect on the microcrystalline silicon deposition process: a comparison between model and experimental results"
    B. Lykas, E. Amanatides, D. Mataras, D. E. Rapakoulias
    J. Phys.: Conf. Ser. 10 (2005) 198-201©



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