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SILANE DISCHARGES REACTION DATABASE
TABLE I: Electron impact dissociation/ionization, radical-molecule,
ion-molecule and radical-radical reactions included in the gas phase model
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R
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Process
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Rate constanta,b,c,d (cm3sec-1)
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1
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e- + SiH4 → SiH2+ 2H
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α x kd
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2
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e- + SiH4 → SiH3 + H
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β x kd
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3
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e- + SiH4 → SiH + H2 + H
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γ x kd
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4
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e- + SiH4 → Si + H2 +2 H
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δ x kd
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5
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e- + H2 → H + H
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0.08 x kd
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6
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e- + Si2H6 → SiH3 + SiH2 + H
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β1 x 2.5 x kd
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7
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e- + Si2H6 → H3SiSiH + H + H
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α1 x 2.5 x kd
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8
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e- + Si3H8 → H3SiSiH + SiH4
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3.5 x kd
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9
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e- + SiH4 → SiH3+ + H
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α2 x kd
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10
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e- + H2 → H2+
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α3 x kd
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11
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H + SiH4 → SiH3 + H2
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2.8x10-11exp(-1250/T)
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12
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H + Si2H6 → SiH4 + SiH3
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0.34x2.4x10-10exp(-1250/T)
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13
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H +Si2H6 → Si2H5 + H2
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0.66x2.4x10-10exp(-1250/T)
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14
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H +SiH3 → SiH2 + H2
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2x10-11
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15
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H +SiH2 ® SiH + H2
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2x10-11
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16
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H + H2Si=SiH2 → Si2H5
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5x10-12
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17
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H +Si3H8 → Si2H5 + SiH4
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2.4x10-10exp(-1250/T)
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18
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SiH + SiH4 → Si2H5
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6.9x10-10 (1-1/(1+0.33P))
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19
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SiH + H2 → SiH3
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2x10-12
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20
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SiH2 + SiH4 → Si2H6
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1.1x10-10(1-1/(1+0.63P))
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21
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SiH2 + SiH4 → H3SiSiH+H2
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2.0x10-11(1/(1+0.63P))
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22
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SiH2 + Si2H6 → Si3H8
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4.2x10-10 (1-1/(1+0.44P))
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23
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SiH2 + Si2H6 → H3SiSiH+SiH2
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4.8x10-11(1-1/(1+0.44P))
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24
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SiH2 + SiH3 → Si2H5
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3.77x10-13
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25
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SiH2 + H2 → SiH4
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3x10-12 (1+1/(1+0.03P))
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26
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SiH3 + SiH3 → SiH4 + SiH2
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0.45x1.5x10-10
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27
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SiH3 + SiH3 → H3SiSiH+SiH2
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0.45x1.5x10-10
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28
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SiH3 + SiH3 → Si2H6
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0.1x1.5x10-10
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29
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SiH3 + Si2H6 → SiH4 + Si2H5
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4x10-10exp(-2500/T)
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30
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SiH3 + Si2H5 → Si3H8
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1.5x10-10
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31
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SiH3 + H2Si=SiH2 → Si3H7
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2x10-12
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33
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H3SiSiH + SiH4 → Si3H8
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1.1x10-10(1-1/(1+0.5P))
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34
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H3SiSiH +Si2H6 → Si4H10
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4.2x10-10(1-1/(1+0.5P))
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35
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H3SiSiH → H2Si=SiH2
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4.5x108
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36
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H2Si=SiH2→ H3SiSiH
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3.8x105
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37
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Si2H5 + SiH4 →SiH3 + Si2H6
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5x10-13
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38
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Si2H5 + Si2H5 → Si3H8 + SiH2
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1.5x10-10
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39
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Η2+ + SiH4→SiH3+ + H2
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3x10-9
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a Rate constants of reactions that involve electron impacts (R1-R10) have units of sec-1
b Rate constants of radical-molecule, ion-molecule and radical-radical reactions (R11-R39) have units of cm3/sec
c Rate constant of reactions 35,36 have units of sec-1 (first order reactions)
dP is the reduced gas pressure in Torr and T is the gas temperature in Kelvin
References for the values of rate constants can be found in:
"Gas-phase and surface kinetics in Plasma Enhanced Chemical Vapor Deposition of microcrystalline silicon"
E. Amanatides, S. Stamou, D. Mataras
J. Appl. Phys. 90, 5786 (2001) ©
TABLE II: Frequencies v, activation energies Ea for reactions
between absorbed states and probabilities of radical-surface reactions
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R
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Surface reactions
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va
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Eab |
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1
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2≡SiH(-H3,=H2)SiH3 →
2 ≡SiH(-H,= H2)+Si2H6↑
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vrec=1014
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0.6 |
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2
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≡SiH(-H3,=H2)SiH3 →≡Sio (-H2o,= Ho)+SiH4↑
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vab=107
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0.3 |
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3
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≡SiH(-H3,=H2)SiH3+≡SiH(-H3,=H2)→
≡SiH(-H3,=H2)+ ≡SiH(-H3,=H2)SiH3
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vhop=1012
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0.2 |
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4
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2≡SiH → 2≡Si + H2↑
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vrecon=1016
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2.83 |
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5
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2=SiH2 → 2≡SiH + H2↑
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vrecon=1014
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1.87 |
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6
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2-SiH3 → 2=SiH2 + H2↑
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vrecon=1010
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1.34 |
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R
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Surface-radical reactions
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Probabilities
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7
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H + ≡Sio (-H2o,= Ho) →≡SiH(-H3,=H2)
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PHchem=1
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8
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H + ≡SiH(-H3,=H2) →≡Sio (-H2o,= Ho) + H2↑
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PHab=0.7
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9
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H + -SiH3 → ≡Sio (-H2o,= Ho) + SiH4↑
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PHetch=0.045
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10
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H +≡SiH(-H3,=H2)SiH3→≡SiH(-H3,=H2) + SiH4↑
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PHrec=1
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11
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SiH3 (or Si2H5) + ≡Sio (-H2o,= Ho) → -SiH3
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P3chem=1
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12
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SiH3 (orSi2H5) + ≡SiH(-H3,=H2)→
≡SiH(-H3,=H2)SiH3
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P3phys=0.5
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13
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SiH3(orSi2H5) + ≡SiH(-H3,=H2)SiH3→
≡SiH(-H3,=H2) + Si2H6 (orSi3H8)↑
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P3rec=1
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14
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SiH2 (or H3SiSiH) + ≡SiH(-H3,=H2) → -SiH3
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P2ins=0.8
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15
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H2SiSiH2 + ≡SiH(-H3,=H2)SiH3 → -SiH3
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P24ins=0.4
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a Frequencies for surface reactions in sec-1
b Activation energies for surface reactions in eV
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