JOINT RESEARCH AND TECHNOLOGY PROGRAMMES 2004 – 2006
GREECE - CHINA COOPERATION PROJECTS
UNIVERSITY OF
PATRAS - UNIVERSITY OF NANAKAI
The main objective of the project is the optimization of Plasma Enhanced
Chemical Vapor Deposition (PECVD) of microcrystalline silicon thin films (μc-Si:H)
from the deposition rate (> 5 Ǻ/sec) and the % crystalline volume fraction
(> 75 %) point of view. This material is used nowadays as an intrinsic layer
in thin film photovoltaic solar cells, leading to the increase of the %
efficiency of these cells and to more stable operation. The technique that
it will be used for the deposition is the Plasma Enhanced Chemical Vapor
Deposition (PECVD) through highly diluted silane in hydrogen RF discharges.
Special attention will be given to the keep the substrate at very low
temperature (< 200
οC)
in order the process to be compatible for deposition at flexible substrates
and to minimize ohmic losses during the application of these films in the
cells. The successive stages of the research effort will be:
·
Optimization of the deposition rate of intrinsic
μc-Si:H
thin films. Investigation of the effect of the main process parameters on
the film growth rate through non-intrusive plasma diagnostics.
·
Simulation of the deposition process by using a 2D self – consistent fluid
modeling. Study of the
μc-Si:H
growth mechanism under conditions of low substrate temperature and high
deposition rates.
·
Thin film characterization from microstructure point of view (% crystalline
volume fraction, % fraction of hydrogen in the films and way of bonding)
and for opto-electronic properties. Optimization of % crystalline volume
fraction of the high-rate deposited thin films.
The successive completion of the stages will lead to the development of a
reliable and reproducible process of high – rate deposition of
μc-Si:H thin films with high crystalline volume fraction suitable for
application in thin film silicon photovoltaic solar cells.
Start Date: 2005-01-01
End Date: 2006-12-31
Duration: 36 months
Project Status: Completed