HV Reactor

160 cm in diameter stainless steel reactor generally used for the development of diagnostics and basic studies. It is equipped with Spatially Resolved OES, Laser Induced Fluoprescence, Electrical diagnostics and LRI. A 1m monochromator (3600 gr/mm grating) is used for spectroscopic analysis.

UHV Silicon

Two chamber load-lock UHV reactor with continuously adjustable interelectrode spacing, used for device quality processing. Primary and secondary vacuum pumping are based on a roots pumping station and a turbomolecular pump respectively

PE-MOCVD

Fully automated large area deposition of SiOx films from organosilicon precursors. The chamber is equiped with two 20 cm electrodes that can both be powered and have an adjustable distance from 1 to 8 cm. it also has has two rectangular 5x25 cm windows for optical diagnostics

ECWR

High Density Plasma Reactor built in 2008. It is equipped with an ECWR plasma source (CCR Copra 250). It has large viewports for plasma diagnosis and can accomodate surface up to 10 x 10 cm. It has been used in the past for deposition of oxides and very recently for deposition of nanostructured inorganic materials

Helical ICP

Typical helical ICP quartz reactor that was built in 2006. It can accomodate substrates of small sizes (2 x2 cm) and depositions and treatments can be either performed in the plasma zone or remotely. It was initially used for treatment of plastics and recently for deposition of ceramic materials

Hollow Cathode

Hollow cathode source built in 2008 as a modification of the UHV CCP reactor. It supports the gas introduction either through the cathode holes or through rings directly into the plasma zone. It is currently used for high - rate deposition of amorphous and microcrystalline silicon

KAI-BOX

Installation of a KAI BOX is under progress (January 2011). It is a bench chamber similar to plasma reactors used for micromorph solar panel manufacturing. It is a medium scale system and can host substrates up to 50 x 50 cm substrates. It will be used for optimization of microcrystalline silicon deposition in an industrial relevant system and for preperation of photonic devices